SI1033X-T1-GE3【PDF 2/7 页】MOSFET 2P-CH 20V 145MA SC89

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Si1033X

Vishay Siliconix

SPECIFICATIONS (T A = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ. a

Max.

Unit

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current a

V GS(th)

I GSS

I DSS

I D(on)

V DS = V GS , I D = - 250 μA

V DS = 0 V, V GS = ± 2.8 V

V DS = 0 V, V GS = ± 4.5 V

V DS = - 16 V, V GS = 0 V

V DS = - 16 V, V GS = 0 V, T J = 85 °C

V DS = - 5 V, V GS = - 4.5 V

- 0.40

- 200

± 0.5

±1

-1

- 1.20

±1

±2

- 500

- 10

V

μA

nA

μA

mA

V GS = - 4.5 V, I D = - 150 mA

8

Drain-Source On-State

Resistance a

R DS(on)

V GS = - 2.5 V, I D = - 125 mA

V GS = - 1.8 V, I D = - 100 mA

12

15

?

V GS = - 1.5 V, I D = - 30 mA

20

Forward Transconductance a

g fs

V DS = - 10 V, I D = - 150 mA

0.4

S

Diode Forward

Voltage a

V SD

I S = - 150 mA, V GS = 0 V

- 1.2

V

Dynamic b

Total Gate Charge

Q g

1500

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Q gs

Q gd

t d(on)

t r

t d(off)

t f

V DS = - 10 V, V GS = - 4.5 V, I D = - 150 mA

V DD = - 10 V, R L = 65 ?

I D ? - 150 mA, V GEN = - 4.5 V, R g = 10 ?

150

450

55

30

60

30

pC

ns

Notes:

a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)

0.5

500

V GS = 5 V thru 2.5 V

0.4

0.3

0.2

0.1

0.0

2V

1.8 V

400

300

200

100

0

T J = - 55 °C

25 °C

125 °C

0

1

2

3

4

5

6

0.0

0.5 1.0 1.5 2.0 2.5

3.0

www.vishay.com

2

V DS - Drain-to-Source Voltage (V)

Output Characteristics

V GS - Gate-to-Source Voltage (V)

Transfer Characteristics

Document Number: 71428

S10-2544-Rev. C, 08-Nov-10

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